| TOPIC: Microwave and optical Materials |
| Manuscript Title: A transparent electrode prepared by co-sputtering system |
| Manuscript Id: IJMOT-2006-4-18 |
| Abstract: The transparent electrode obtained from co-sputtering system with ITO and ZnO targets had been investigated. The resistivity was significant improved with an additional co-sputtered ZnO target compared to the individual ITO film. A lowest resistivity transparent film of 3.69 × 10-4 Ω-cm was achieved at room temperature as the rf power of co-sputtering system for ITO and ZnO targets being 150W and 75W, respectively. The average transmittance in visible wavelength was over 80% obtained from these co-sputtering films. The surface roughness of these co-sputtered films was also superior to individual ITO films attributed to amorphous formation prepared by co-sputtered ITO and ZnO targets. |
| Authors: Day-Shan Liu, Chun-Ching Wu, and Ching-Ting Lee |
Category: OpticalTechnology Submitted On: 8/1/2006 Full Text [PDF] Pg.Nos: 502-505
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| Manuscript Title: Gallium Arsenide (GaAs) and Lead Zirconate Titanate in a Microwave Field Field |
| Manuscript Id: IJMOT-2006-6-81 |
| Abstract: A cylindrical microwave resonant cavity in TE011 mode was used to study the response of raw and ground state sample of gallium arsenide (GaAs) and lead Zirconate Titanate (PZT). From Slater’s Perturbation theory the Dielectric response of the sample was studied as a function of temperature. |
| Authors: J.N.Dahiya, A. Anand, J.A. Roberts, F. McDaniel |
Category: MicrowaveTechnology Submitted On: 6/5/2006 Full Text [PDF] Pg.Nos: 506-510
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| Manuscript Title: Microwave Dielectric Properties of b-Si3N4 Ceramics |
| Manuscript Id: IJMOT-2006-6-93 |
| Abstract: The dielectric properties of Si3N4 ceramics were measured over the frequency range of 1 and 10 GHz using cavity resonator method. Effects of porosity, sintering additives and frequencies on dielectric properties were investigated. The dependence of er’ on porosity can be described simply by Maxwell’s relationship, although tan d did not show clear dependency on porosity. Unlike AlN ceramics, Si3N4 ceramics exhibited no dielectric dispersion in the microwave range. |
| Authors: Mikito Kitayama, Tomohiro Amano, Yoshio Ohta, Kenji Morinaga |
Category: MicrowaveTechnology Submitted On: 6/8/2006 Full Text [PDF] Pg.Nos: 511-516
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| Manuscript Title: Effects of multilayer thickness in anode and cathode on the top-emission organic light-emitting diodes |
| Manuscript Id: IJMOT-2006-6-137 |
| Abstract: Abstract- Nowadays in wireless communication, the fade slope is one of the important parameters used in Fade Mitigation Technique for developing reliable communication link. Recently, the computer based received signal generation technique has been improved using fade slope. This paper presents, using a rigorous method for data analysis, the fade slope as observed in our stations. We found from our analysis that the standard deviation of the fade slope as a function of attenuation has a maximum and does not match the model proposed by the ITU-R P.1623 recommendation. According to this observation, an improved fade slope model is proposed.
Index Terms- Satellite link, signal level, fade slope, rain fade analysis, rain fades modeling.
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| Authors: S. J. Lin, H. Y. Ueng, P. H. Yeh, F. S. Juang |
Category: OpticalTechnology Submitted On: 8/10/2006 Full Text [PDF] Pg.Nos: 517-522
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| Manuscript Title: Spectroscopic Ellipsometry: its Accuracy and Potentiality |
| Manuscript Id: IJMOT-2006-6-158 |
| Abstract: Spectroscopic ellipsometry is presented in two selected applications. First is motivated by the industrial need for non-invasive and precise temperature measurement of Si wafers. Second application presents combined optical characterization of SiO2 layers deposited by high-density reactive ion plating onto glass substrates, where increase of glass refractive index, due to its exposure to high plasma during deposition, was evidenced. |
| Authors: Jan Mistrik, Tomuo Yamaguchi, Roman Antos, Zhong-Tao Jiang, Ivan Ohlidal, Mitsuru Aoyama |
Category: MicrowaveTechnology Submitted On: 6/12/2006 Full Text [PDF] Pg.Nos: 523-527
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